AwardedSuppliesEuropeanOpen

European Tender Dry Etcher

Universiteit Twente · Open · 1 lots · 337390
Type
Supplies
38000000
Estimated value
€ 1,05M
estimated
To deadline
Ongoing
Knock-outs
n/a
exclusion grounds
Award basis
Best price-quality ratio
Assess manuallyconfidence low

Universiteit Twente has issued a closed public tender (No. 337390) for a new Dry Etcher. The project focuses on an advanced chip-etch system with precise, uniform processes for silicon on 100–150 mm wafers. The deadline is 15 July 2024 and the tender value is not precisely estimated. The CPV code is unknown, it is a European digital procedure and there is no linked reference. **Key points** - **Objective**: New Dry Etcher for nano-/micro-scale structures with 2 nm precision. - **Specifications**: * Etch rates 1 nm/min – 15 µm/min. * Uniform plasma, three-source ICP/CCP design. * OES, laser interferometry, chiller (-20 °C → 20 °C). * Chemical gases: Ar, O2, N2, SF6, C4F8. - **Value**: Unknown. - **Location**: Netherlands. - **Procedure**: Public, supplies, digital. - **Deadline**: 15 July 2024 12:00 UTC.

Supplies · Open · European procedure

European
Contracting authority
Contract type
Supplies
Open
Estimated value
€1,050,000
estimated value
Submission deadline
Ongoing
12:00
Scope
European
European procedure
Lots
1
1 lots
Main CPV code
Location
Netherlands
CharacteristicsCPV 38SuppliesEU tender

01What is being requested

Universiteit Twente has issued a closed public tender (No. 337390) for a new Dry Etcher. The project focuses on an advanced chip-etch system with precise, uniform processes for silicon on 100–150 mm wafers. The deadline is 15 July 2024 and the tender value is not precisely estimated. The CPV code is unknown, it is a European digital procedure and there is no linked reference. **Key points** - **Objective**: New Dry Etcher for nano-/micro-scale structures with 2 nm precision. - **Specifications**: * Etch rates 1 nm/min – 15 µm/min. * Uniform plasma, three-source ICP/CCP design. * OES, laser interferometry, chiller (-20 °C → 20 °C). * Chemical gases: Ar, O2, N2, SF6, C4F8. - **Value**: Unknown. - **Location**: Netherlands. - **Procedure**: Public, supplies, digital. - **Deadline**: 15 July 2024 12:00 UTC.

The MESA+ Institute will invest in a new Dry Etch tool system to reinforce their state-of-the-art etch capabilities and etch capacity. Applications: The tool must be capable of etching silicon and/or silicon-based materials for a variety of nano- and/or microscale structures with nanometre precision and high wafer-scale uniformity. The tool must be suitable for the etching of silicon-based materials with etch rates of 1 nm/min up to 15 µm/min. The tool must be equipped with reliable end-pointing, also for loadings of < 5% open area (based on 100 mm wafer), using OES or laser interferometry.

38000000€ 1,05MSupplies
1European Tender Dry Etcher€1,050,000

02Exclusion grounds

Exclusion grounds — consult the ESPD
  • No specific exclusion grounds were extracted. In a European tender, the mandatory and discretionary grounds of art. 2.86/2.87 of the Dutch Procurement Act almost always apply — check the European Single Procurement Document (ESPD).

03Value in context

€1,050,000

04Bidders in this segment

#Likely bidderFitWins
1Bruker Nederland B.V.SME8313×
2Bluefors OyUnknown8211×
3Oxford Instruments GmbHUnknown81
4Agilent Technologies Netherlands B.V.SME7910×
5Carl Zeiss B.V.SME7710×
6Waters Chromatography B.V.SME7512×

05Legal themes that may be relevant here

06Frequently asked questions

What are the technical requirements for the etch rate and precision of the Dry Etcher?
The tool must be suitable for etching silicon and/or silicon-based materials with etch rates of 1 nm/min to 15 µm/min. The required nanometric precision is an accuracy of ± 2 nm when using fluorine-based chemistries.
What specifications must the plasma design of the tool meet?
The system requires a uniform plasma with a dual ICP source chamber design, consisting of a main ICP source above the chamber and a second ICP source in the side wall. Additionally, a third CCP or plate source must be present to control the ion energy.
Which gases and peripheral equipment are required for the operation of the Dry Etcher?
The tool must support processes using the gases Ar, O2, N2, SF6, and C4F8. Additionally, equipment with optical emission spectrometry (OES), laser interferometry, and a chiller with an electro-temperature between -20°C and 20°C is required.
For which wafer sizes is the uniformity of the tool guaranteed?
The tool must provide a uniform plasma ion density that ensures uniform etching performance for wafer sizes of 100 mm and 150 mm.

Automatically compiled from the official tender data and documents.

07Estimated value versus the market

p25
€ 300K
median
€ 515K
p75
€ 1,7 mln
€ 1,1 mln

Gegunde waarden in CPV 38 · leveringen n=331